Charge transport in printed silicon nanoparticle networks

Doctoral Thesis

2013

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University of Cape Town

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For the first time, the charge transport mechanisms in printed silicon nanoparticle networks have been comprehensively studied using variable temperature IV characteristics and Hall effect measurements, supported by microscopy studies. The conductivity can be described as hopping percolation in which activated charge transport is limited by band bending at the interface between particles and electron trapping at surface states. To probe the charge transport, two types of printed silicon nanoparticle networks based on milled silicon nanoparticles and highly doped p-type chemical vapour synthesised nanoparticles, were studied and compared.
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