Atomic mobility in thin solid Pa2Si films

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dc.contributor.advisorComrie, Craig Men_ZA
dc.contributor.authorZingu, Edmund Charlesen_ZA
dc.date.accessioned2016-02-15T07:17:29Z
dc.date.available2016-02-15T07:17:29Z
dc.date.issued1985en_ZA
dc.descriptionBibliography: pages 210-215.en_ZA
dc.description.abstractA theory for the growth kinetics of planar silicide formation in single- and bi-layer metal silicon systems has been developed on the basis that the chemical potential gradient in the growing layer is the driving force for diffusion. The predictions of the theory, when applied to single layer metal-silicon systems, is in agreement with other theories and with experimental results. Planar growth of the outer silicide layer in bilayer metal-silicon systems is predicted to proceed linearly with time, both when controlled by an interfacial reaction and when limited by diffusion through the interposed silicide layer (when this layer is sufficiently thick). In the latter case it is predicted that the growth rate of the outer silicide layer is inversely proportional to the thickness of the interposed layer.en_ZA
dc.identifier.apacitationZingu, E. C. (1985). <i>Atomic mobility in thin solid Pa2Si films</i>. (Thesis). University of Cape Town ,Faculty of Science ,Department of Physics. Retrieved from http://hdl.handle.net/11427/17052en_ZA
dc.identifier.chicagocitationZingu, Edmund Charles. <i>"Atomic mobility in thin solid Pa2Si films."</i> Thesis., University of Cape Town ,Faculty of Science ,Department of Physics, 1985. http://hdl.handle.net/11427/17052en_ZA
dc.identifier.citationZingu, E. 1985. Atomic mobility in thin solid Pa2Si films. University of Cape Town.en_ZA
dc.identifier.ris TY - Thesis / Dissertation AU - Zingu, Edmund Charles AB - A theory for the growth kinetics of planar silicide formation in single- and bi-layer metal silicon systems has been developed on the basis that the chemical potential gradient in the growing layer is the driving force for diffusion. The predictions of the theory, when applied to single layer metal-silicon systems, is in agreement with other theories and with experimental results. Planar growth of the outer silicide layer in bilayer metal-silicon systems is predicted to proceed linearly with time, both when controlled by an interfacial reaction and when limited by diffusion through the interposed silicide layer (when this layer is sufficiently thick). In the latter case it is predicted that the growth rate of the outer silicide layer is inversely proportional to the thickness of the interposed layer. DA - 1985 DB - OpenUCT DP - University of Cape Town LK - https://open.uct.ac.za PB - University of Cape Town PY - 1985 T1 - Atomic mobility in thin solid Pa2Si films TI - Atomic mobility in thin solid Pa2Si films UR - http://hdl.handle.net/11427/17052 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/17052
dc.identifier.vancouvercitationZingu EC. Atomic mobility in thin solid Pa2Si films. [Thesis]. University of Cape Town ,Faculty of Science ,Department of Physics, 1985 [cited yyyy month dd]. Available from: http://hdl.handle.net/11427/17052en_ZA
dc.language.isoengen_ZA
dc.publisher.departmentDepartment of Physicsen_ZA
dc.publisher.facultyFaculty of Scienceen_ZA
dc.publisher.institutionUniversity of Cape Town
dc.subject.otherPhysicsen_ZA
dc.subject.otherKineticsen_ZA
dc.titleAtomic mobility in thin solid Pa2Si filmsen_ZA
dc.typeDoctoral Thesis
dc.type.qualificationlevelDoctoral
dc.type.qualificationnamePhDen_ZA
uct.type.filetypeText
uct.type.filetypeImage
uct.type.publicationResearchen_ZA
uct.type.resourceThesisen_ZA
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