Electronic properties and microstructure of nanoparticulate silicon systems for diode applications

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dc.contributor.advisorHärting, Margiten_ZA
dc.contributor.advisorBritton, David Ten_ZA
dc.contributor.authorMännl, Ulrich Philippen_ZA
dc.date.accessioned2015-05-28T07:02:37Z
dc.date.available2015-05-28T07:02:37Z
dc.date.issued2014en_ZA
dc.descriptionIncludes bibliographical references.en_ZA
dc.description.abstractIn printed electronics the use of semiconducting silicon nanoparticles allows more than the simple printing of conductive materials. It gives the possibility of fabricating robust and inexpensive, active components. This work presents the design, fabrication, and characterization of Schottky barrier diodes using silicon nanoparticulate composites. Within this work it could be shown, that silicon nanoparticles produced by high energy milling can be used to replace the pigment in water-based graphic inks, which on curing have unique semiconducting properties, arising from the transport of charge through a percolation network of crystalline silicon nanoparticles. In this thesis scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and mid-infrared scanning near-field optical microscopy (IR s-SNOM) were employed to investigate the micro-scale as well as the meso-scale structure of the printed particle networks and, more importantly the structure of the interface between particles. A close contact between lattice planes of different particles was observed, without the presence of a thick intervening oxide layer. Altogether, the results presented in this thesis suggest that highly doped silicon nanoparticles produced by high energy milling are suitable to be used for Schottky barrier diodes fabricated by screen printing. The saturation current of the diodes was about 0.11µA for reverse bias voltages up to 5V with an ideality factor of 10.6, and rectification ratios of approximately 10⁴ were observed.en_ZA
dc.identifier.apacitationMännl, U. P. (2014). <i>Electronic properties and microstructure of nanoparticulate silicon systems for diode applications</i>. (Thesis). University of Cape Town ,Faculty of Science ,Department of Physics. Retrieved from http://hdl.handle.net/11427/12978en_ZA
dc.identifier.chicagocitationMännl, Ulrich Philipp. <i>"Electronic properties and microstructure of nanoparticulate silicon systems for diode applications."</i> Thesis., University of Cape Town ,Faculty of Science ,Department of Physics, 2014. http://hdl.handle.net/11427/12978en_ZA
dc.identifier.citationMännl, U. 2014. Electronic properties and microstructure of nanoparticulate silicon systems for diode applications. University of Cape Town.en_ZA
dc.identifier.ris TY - Thesis / Dissertation AU - Männl, Ulrich Philipp AB - In printed electronics the use of semiconducting silicon nanoparticles allows more than the simple printing of conductive materials. It gives the possibility of fabricating robust and inexpensive, active components. This work presents the design, fabrication, and characterization of Schottky barrier diodes using silicon nanoparticulate composites. Within this work it could be shown, that silicon nanoparticles produced by high energy milling can be used to replace the pigment in water-based graphic inks, which on curing have unique semiconducting properties, arising from the transport of charge through a percolation network of crystalline silicon nanoparticles. In this thesis scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and mid-infrared scanning near-field optical microscopy (IR s-SNOM) were employed to investigate the micro-scale as well as the meso-scale structure of the printed particle networks and, more importantly the structure of the interface between particles. A close contact between lattice planes of different particles was observed, without the presence of a thick intervening oxide layer. Altogether, the results presented in this thesis suggest that highly doped silicon nanoparticles produced by high energy milling are suitable to be used for Schottky barrier diodes fabricated by screen printing. The saturation current of the diodes was about 0.11µA for reverse bias voltages up to 5V with an ideality factor of 10.6, and rectification ratios of approximately 10&#8308; were observed. DA - 2014 DB - OpenUCT DP - University of Cape Town LK - https://open.uct.ac.za PB - University of Cape Town PY - 2014 T1 - Electronic properties and microstructure of nanoparticulate silicon systems for diode applications TI - Electronic properties and microstructure of nanoparticulate silicon systems for diode applications UR - http://hdl.handle.net/11427/12978 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/12978
dc.identifier.vancouvercitationMännl UP. Electronic properties and microstructure of nanoparticulate silicon systems for diode applications. [Thesis]. University of Cape Town ,Faculty of Science ,Department of Physics, 2014 [cited yyyy month dd]. Available from: http://hdl.handle.net/11427/12978en_ZA
dc.language.isoengen_ZA
dc.publisher.departmentDepartment of Physicsen_ZA
dc.publisher.facultyFaculty of Scienceen_ZA
dc.publisher.institutionUniversity of Cape Town
dc.subject.otherPhysicsen_ZA
dc.titleElectronic properties and microstructure of nanoparticulate silicon systems for diode applicationsen_ZA
dc.typeDoctoral Thesis
dc.type.qualificationlevelDoctoral
dc.type.qualificationnamePhDen_ZA
uct.type.filetypeText
uct.type.filetypeImage
uct.type.publicationResearchen_ZA
uct.type.resourceThesisen_ZA
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