Light induced degradation in hydrogenated amorphous silicon (a-Si:H)

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dc.contributor.authorSigcau, Zen_ZA
dc.date.accessioned2014-08-13T20:12:21Z
dc.date.available2014-08-13T20:12:21Z
dc.date.issued2005en_ZA
dc.descriptionIncludes bibliographical references (leaves 73-77).en_ZA
dc.description.abstractLight induced degradation in the microstructure and optical properties of a series of hydrogenated amorphous silicon (a-Si:H) layers, deposited by hot wire chemical vapour deposition system (HWCVD) on glass and silicon substrates at different temperatures ranging from 250Light induced degradation in the microstructure and optical properties of a series of hydrogenated amorphous silicon (a-Si:H) layers, deposited by hot wire chemical vapour deposition system (HWCVD) on glass and silicon substrates at different temperatures ranging from 250°C to 500°C are investigated. Light soaking experiments were carried out using a mirrored chamber with a metal halide lamp.en_ZA
dc.identifier.apacitationSigcau, Z. (2005). <i>Light induced degradation in hydrogenated amorphous silicon (a-Si:H)</i>. (Thesis). University of Cape Town ,Faculty of Science ,Department of Physics. Retrieved from http://hdl.handle.net/11427/6552en_ZA
dc.identifier.chicagocitationSigcau, Z. <i>"Light induced degradation in hydrogenated amorphous silicon (a-Si:H)."</i> Thesis., University of Cape Town ,Faculty of Science ,Department of Physics, 2005. http://hdl.handle.net/11427/6552en_ZA
dc.identifier.citationSigcau, Z. 2005. Light induced degradation in hydrogenated amorphous silicon (a-Si:H). University of Cape Town.en_ZA
dc.identifier.ris TY - Thesis / Dissertation AU - Sigcau, Z AB - Light induced degradation in the microstructure and optical properties of a series of hydrogenated amorphous silicon (a-Si:H) layers, deposited by hot wire chemical vapour deposition system (HWCVD) on glass and silicon substrates at different temperatures ranging from 250Light induced degradation in the microstructure and optical properties of a series of hydrogenated amorphous silicon (a-Si:H) layers, deposited by hot wire chemical vapour deposition system (HWCVD) on glass and silicon substrates at different temperatures ranging from 250°C to 500°C are investigated. Light soaking experiments were carried out using a mirrored chamber with a metal halide lamp. DA - 2005 DB - OpenUCT DP - University of Cape Town LK - https://open.uct.ac.za PB - University of Cape Town PY - 2005 T1 - Light induced degradation in hydrogenated amorphous silicon (a-Si:H) TI - Light induced degradation in hydrogenated amorphous silicon (a-Si:H) UR - http://hdl.handle.net/11427/6552 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/6552
dc.identifier.vancouvercitationSigcau Z. Light induced degradation in hydrogenated amorphous silicon (a-Si:H). [Thesis]. University of Cape Town ,Faculty of Science ,Department of Physics, 2005 [cited yyyy month dd]. Available from: http://hdl.handle.net/11427/6552en_ZA
dc.language.isoengen_ZA
dc.publisher.departmentDepartment of Physicsen_ZA
dc.publisher.facultyFaculty of Scienceen_ZA
dc.publisher.institutionUniversity of Cape Town
dc.subject.otherPhysicsen_ZA
dc.titleLight induced degradation in hydrogenated amorphous silicon (a-Si:H)en_ZA
dc.typeMaster Thesis
dc.type.qualificationlevelMasters
dc.type.qualificationnameMScen_ZA
uct.type.filetypeText
uct.type.filetypeImage
uct.type.publicationResearchen_ZA
uct.type.resourceThesisen_ZA
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