The structural characterisation of HWCVD-deposited nanocrystalline silicon films

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dc.contributor.authorSwain, Biphu
dc.date.accessioned2018-01-24T09:59:52Z
dc.date.available2018-01-24T09:59:52Z
dc.date.issued2009
dc.date.updated2016-01-13T10:31:20Z
dc.description.abstractNanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30-50% and the nc-Si crystallite size was in the range 20-35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm.
dc.identifier.apacitationSwain, B. (2009). The structural characterisation of HWCVD-deposited nanocrystalline silicon films. <i>South African Journal of Science</i>, http://hdl.handle.net/11427/26915en_ZA
dc.identifier.chicagocitationSwain, Biphu "The structural characterisation of HWCVD-deposited nanocrystalline silicon films." <i>South African Journal of Science</i> (2009) http://hdl.handle.net/11427/26915en_ZA
dc.identifier.citationSwain, B. P. (2009). The structural characterisation of HWCVD-deposited nanocrystalline silicon films. South African Journal of Science, 105(1-2), 77-80.
dc.identifier.ris TY - Journal Article AU - Swain, Biphu AB - Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30-50% and the nc-Si crystallite size was in the range 20-35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm. DA - 2009 DB - OpenUCT DP - University of Cape Town J1 - South African Journal of Science LK - https://open.uct.ac.za PB - University of Cape Town PY - 2009 T1 - The structural characterisation of HWCVD-deposited nanocrystalline silicon films TI - The structural characterisation of HWCVD-deposited nanocrystalline silicon films UR - http://hdl.handle.net/11427/26915 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/26915
dc.identifier.vancouvercitationSwain B. The structural characterisation of HWCVD-deposited nanocrystalline silicon films. South African Journal of Science. 2009; http://hdl.handle.net/11427/26915.en_ZA
dc.language.isoeng
dc.publisher.departmentDepartment of Physicsen_ZA
dc.publisher.facultyFaculty of Scienceen_ZA
dc.publisher.institutionUniversity of Cape Town
dc.sourceSouth African Journal of Science
dc.source.urihttps://www.sajs.co.za/
dc.subject.otherX-ray scattering
dc.subject.otherX-ray diffractometer
dc.subject.otherChemical vapor deposition
dc.subject.otherRaman spectroscopy
dc.subject.otherNanoparticles
dc.subject.otherScaling laws (Statistical physics)
dc.titleThe structural characterisation of HWCVD-deposited nanocrystalline silicon films
dc.typeJournal Article
uct.type.filetypeText
uct.type.filetypeImage
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