The structural characterisation of HWCVD-deposited nanocrystalline silicon films

Journal Article

2009

Permanent link to this Item
http://hdl.handle.net/11427/26915
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Swain_Article_2009.pdf (437.4 KB)
Authors
Swain, Biphu
Journal Title

South African Journal of Science

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https://www.sajs.co.za/
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Publisher

University of Cape Town

Department
Department of Physics
Faculty
Faculty of Science
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Abstract
Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H2 concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30-50% and the nc-Si crystallite size was in the range 20-35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was ~2 nm.
Description
Keywords
X-ray scattering
X-ray diffractometer
Chemical vapor deposition
Raman spectroscopy
Nanoparticles
Scaling laws (Statistical physics)

Reference:

Swain, B. P. (2009). The structural characterisation of HWCVD-deposited nanocrystalline silicon films. South African Journal of Science, 105(1-2), 77-80.

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