Microstructure, stress and defect evolution under illumination in hydrogenated amorphous silicon (a-Si:H)
Doctoral Thesis
2008
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University of Cape Town
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Abstract
The purpose of this study is firstly to investigate the relation between microstructure, stress and hydrogen distribution in as deposited hydrogenated amorphous silicon (a-Si:H) layers, and secondly the investigation of the influence of illumination on hydrogen evolution and its relationship with the strain in illuminated layers.
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Includes abstract.
Includes bibliographical references (leaves 151-157).
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Reference:
Minani, E. 2008. Microstructure, stress and defect evolution under illumination in hydrogenated amorphous silicon (a-Si:H). University of Cape Town.