Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques

dc.contributor.authorNemalili, Fhatuwani Patricken_ZA
dc.date.accessioned2014-08-13T20:08:31Z
dc.date.available2014-08-13T20:08:31Z
dc.date.issued2004en_ZA
dc.descriptionIncludes bibliographical references (leaves 68-72).en_ZA
dc.description.abstractIn this work we report on the electrical transport properties of two classes of silicon: hydrogenated amorphous silicon (a-Si:H) obtained by hot wire chemical vapour deposition (HWCVD), and printed nanocrystalline silicon (nc-Si), both deposited on a flexible, lightweight substrate of 80 g m-2 wood-free paper. For different devices such as field effect transistors and n-i-p solar cells, electrical measurements will be discussed. A special emphasis is placed on field effect mobility and amplification factor measurements because these provide information about the quality of the material.en_ZA
dc.identifier.apacitationNemalili, F. P. (2004). <i>Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques</i>. (Thesis). University of Cape Town ,Faculty of Science ,Department of Physics. Retrieved from http://hdl.handle.net/11427/6543en_ZA
dc.identifier.chicagocitationNemalili, Fhatuwani Patrick. <i>"Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques."</i> Thesis., University of Cape Town ,Faculty of Science ,Department of Physics, 2004. http://hdl.handle.net/11427/6543en_ZA
dc.identifier.citationNemalili, F. 2004. Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques. University of Cape Town.en_ZA
dc.identifier.ris TY - Thesis / Dissertation AU - Nemalili, Fhatuwani Patrick AB - In this work we report on the electrical transport properties of two classes of silicon: hydrogenated amorphous silicon (a-Si:H) obtained by hot wire chemical vapour deposition (HWCVD), and printed nanocrystalline silicon (nc-Si), both deposited on a flexible, lightweight substrate of 80 g m-2 wood-free paper. For different devices such as field effect transistors and n-i-p solar cells, electrical measurements will be discussed. A special emphasis is placed on field effect mobility and amplification factor measurements because these provide information about the quality of the material. DA - 2004 DB - OpenUCT DP - University of Cape Town LK - https://open.uct.ac.za PB - University of Cape Town PY - 2004 T1 - Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques TI - Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques UR - http://hdl.handle.net/11427/6543 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/6543
dc.identifier.vancouvercitationNemalili FP. Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques. [Thesis]. University of Cape Town ,Faculty of Science ,Department of Physics, 2004 [cited yyyy month dd]. Available from: http://hdl.handle.net/11427/6543en_ZA
dc.language.isoengen_ZA
dc.publisher.departmentDepartment of Physicsen_ZA
dc.publisher.facultyFaculty of Scienceen_ZA
dc.publisher.institutionUniversity of Cape Town
dc.subject.otherPhysicsen_ZA
dc.titleElectrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniquesen_ZA
dc.typeMaster Thesis
dc.type.qualificationlevelMasters
dc.type.qualificationnameMScen_ZA
uct.type.filetypeText
uct.type.filetypeImage
uct.type.publicationResearchen_ZA
uct.type.resourceThesisen_ZA
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