Controlling CoSi2 formation temperature by reactive deposition

dc.contributor.advisorComrie, Craigen_ZA
dc.contributor.authorAhmed, Hind Ali Mohmmeden_ZA
dc.date.accessioned2014-08-13T20:03:38Z
dc.date.available2014-08-13T20:03:38Z
dc.date.issued2008en_ZA
dc.descriptionIncludes abstract.en_ZA
dc.descriptionIncludes bibliographical references (leaves 70-77).en_ZA
dc.description.abstractWhen cobalt is evaporated under ultra high vacuum conditions onto a heated silicon substrate, the reaction between the cobalt and the silicon starts immediately and cobalt silicides are formed directly - a technique referred to as reactive deposition. This procedure was used to grow silicide films over a variety of temperatures ranging between 375 - 550 ce. It was found that a disilicide film is formed directly for substrate temperature maintained at Ten_ZA
dc.identifier.apacitationAhmed, H. A. M. (2008). <i>Controlling CoSi2 formation temperature by reactive deposition</i>. (Thesis). University of Cape Town ,Faculty of Science ,Department of Physics. Retrieved from http://hdl.handle.net/11427/6523en_ZA
dc.identifier.chicagocitationAhmed, Hind Ali Mohmmed. <i>"Controlling CoSi2 formation temperature by reactive deposition."</i> Thesis., University of Cape Town ,Faculty of Science ,Department of Physics, 2008. http://hdl.handle.net/11427/6523en_ZA
dc.identifier.citationAhmed, H. 2008. Controlling CoSi2 formation temperature by reactive deposition. University of Cape Town.en_ZA
dc.identifier.ris TY - Thesis / Dissertation AU - Ahmed, Hind Ali Mohmmed AB - When cobalt is evaporated under ultra high vacuum conditions onto a heated silicon substrate, the reaction between the cobalt and the silicon starts immediately and cobalt silicides are formed directly - a technique referred to as reactive deposition. This procedure was used to grow silicide films over a variety of temperatures ranging between 375 - 550 ce. It was found that a disilicide film is formed directly for substrate temperature maintained at T DA - 2008 DB - OpenUCT DP - University of Cape Town LK - https://open.uct.ac.za PB - University of Cape Town PY - 2008 T1 - Controlling CoSi2 formation temperature by reactive deposition TI - Controlling CoSi2 formation temperature by reactive deposition UR - http://hdl.handle.net/11427/6523 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/6523
dc.identifier.vancouvercitationAhmed HAM. Controlling CoSi2 formation temperature by reactive deposition. [Thesis]. University of Cape Town ,Faculty of Science ,Department of Physics, 2008 [cited yyyy month dd]. Available from: http://hdl.handle.net/11427/6523en_ZA
dc.language.isoengen_ZA
dc.publisher.departmentDepartment of Physicsen_ZA
dc.publisher.facultyFaculty of Scienceen_ZA
dc.publisher.institutionUniversity of Cape Town
dc.subject.otherPhysicsen_ZA
dc.titleControlling CoSi2 formation temperature by reactive depositionen_ZA
dc.typeMaster Thesis
dc.type.qualificationlevelMasters
dc.type.qualificationnameMScen_ZA
uct.type.filetypeText
uct.type.filetypeImage
uct.type.publicationResearchen_ZA
uct.type.resourceThesisen_ZA
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