Controlling CoSi2 formation temperature by reactive deposition
Master Thesis
2008
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University of Cape Town
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Abstract
When cobalt is evaporated under ultra high vacuum conditions onto a heated silicon substrate, the reaction between the cobalt and the silicon starts immediately and cobalt silicides are formed directly - a technique referred to as reactive deposition. This procedure was used to grow silicide films over a variety of temperatures ranging between 375 - 550 ce. It was found that a disilicide film is formed directly for substrate temperature maintained at T
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Includes bibliographical references (leaves 70-77).
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Ahmed, H. 2008. Controlling CoSi2 formation temperature by reactive deposition. University of Cape Town.