Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators

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dc.contributor.advisorDowning, B Jen_ZA
dc.contributor.authorCrouch, David Andrewen_ZA
dc.date.accessioned2014-10-11T12:05:44Z
dc.date.available2014-10-11T12:05:44Z
dc.date.issued1988en_ZA
dc.descriptionBibliography: leaves 175-177.en_ZA
dc.description.abstractThis thesis is concerned with Gallium Arsenide Metal Semiconductor Field Effect Transistor Microstrip Integrated Circuit Dielectric Resonator Oscillators (GaAs MESFET MIC DROs) - the different types, their design and their performance compared to other high Q factor (ie narrowband) microwave oscillators. The thesis has three major objectives. The first is to collate the information required to build microwave DROs. The second is to present the practical results obtained from Dielectric Resonator Bandreject and Bandpass filters (DR BRFs and DR BPFs). The last is to present and compare results from a DR stabilised microstrip oscillator and three types of series feedback DROs. Narrowband oscillators are usually evaluated in terms of their frequency stability, reliability, size, cost, efficiency and output power characteristics. In terms of these parameters DROs outperform Gunn cavity oscillators and are only bettered by crystal locked sources in terms of frequency temperature stability and long-term stability. The components of a GaAs MESFET MIC DRO possess ideal properties for the construction of a narrowband source with the exception of the long term stability of the GaAs MESFET. GaAs MESFET•DROs have the best published DRO results for efficiency, output power, power temperature stability and external Q factor. Basic oscillator theory derived by Kurokawa can be applied to both negative resistance and feedback oscillators. Impedance locus, device-line and operating point concepts provide a convenient framework for understanding hysteresis in microwave oscillators. The work by Kurokawa can also be translated into the S-parameter domain which has proved convenient for the design of microwave oscillators.en_ZA
dc.identifier.apacitationCrouch, D. A. (1988). <i>Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators</i>. (Thesis). University of Cape Town ,Faculty of Engineering & the Built Environment ,Department of Electrical Engineering. Retrieved from http://hdl.handle.net/11427/8329en_ZA
dc.identifier.chicagocitationCrouch, David Andrew. <i>"Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators."</i> Thesis., University of Cape Town ,Faculty of Engineering & the Built Environment ,Department of Electrical Engineering, 1988. http://hdl.handle.net/11427/8329en_ZA
dc.identifier.citationCrouch, D. 1988. Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators. University of Cape Town.en_ZA
dc.identifier.ris TY - Thesis / Dissertation AU - Crouch, David Andrew AB - This thesis is concerned with Gallium Arsenide Metal Semiconductor Field Effect Transistor Microstrip Integrated Circuit Dielectric Resonator Oscillators (GaAs MESFET MIC DROs) - the different types, their design and their performance compared to other high Q factor (ie narrowband) microwave oscillators. The thesis has three major objectives. The first is to collate the information required to build microwave DROs. The second is to present the practical results obtained from Dielectric Resonator Bandreject and Bandpass filters (DR BRFs and DR BPFs). The last is to present and compare results from a DR stabilised microstrip oscillator and three types of series feedback DROs. Narrowband oscillators are usually evaluated in terms of their frequency stability, reliability, size, cost, efficiency and output power characteristics. In terms of these parameters DROs outperform Gunn cavity oscillators and are only bettered by crystal locked sources in terms of frequency temperature stability and long-term stability. The components of a GaAs MESFET MIC DRO possess ideal properties for the construction of a narrowband source with the exception of the long term stability of the GaAs MESFET. GaAs MESFET•DROs have the best published DRO results for efficiency, output power, power temperature stability and external Q factor. Basic oscillator theory derived by Kurokawa can be applied to both negative resistance and feedback oscillators. Impedance locus, device-line and operating point concepts provide a convenient framework for understanding hysteresis in microwave oscillators. The work by Kurokawa can also be translated into the S-parameter domain which has proved convenient for the design of microwave oscillators. DA - 1988 DB - OpenUCT DP - University of Cape Town LK - https://open.uct.ac.za PB - University of Cape Town PY - 1988 T1 - Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators TI - Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators UR - http://hdl.handle.net/11427/8329 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/8329
dc.identifier.vancouvercitationCrouch DA. Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators. [Thesis]. University of Cape Town ,Faculty of Engineering & the Built Environment ,Department of Electrical Engineering, 1988 [cited yyyy month dd]. Available from: http://hdl.handle.net/11427/8329en_ZA
dc.language.isoeng
dc.publisher.departmentDepartment of Electrical Engineeringen_ZA
dc.publisher.facultyFaculty of Engineering and the Built Environment
dc.publisher.institutionUniversity of Cape Town
dc.subject.otherElectrical and Electronic Engineeringen_ZA
dc.titleGallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillatorsen_ZA
dc.typeMaster Thesis
dc.type.qualificationlevelMasters
dc.type.qualificationnameMScen_ZA
uct.type.filetypeText
uct.type.filetypeImage
uct.type.publicationResearchen_ZA
uct.type.resourceThesisen_ZA
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