Effect of high temperature deposition on CoSi 2 phase formation

Simple item page
dc.contributor.authorComrie, C M
dc.contributor.authorAhmed, H
dc.contributor.authorSmeets, D
dc.contributor.authorDemeulemeester, J
dc.contributor.authorTurner, S
dc.contributor.authorVan Tendeloo, G
dc.contributor.authorDetavernier, C
dc.contributor.authorVantomme, A
dc.date.accessioned2021-10-08T07:04:24Z
dc.date.available2021-10-08T07:04:24Z
dc.date.issued2013
dc.description.abstractAbstract: This paper discusses the nucleation behaviour of the CoSi to CoSi2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi2, its growth behaviour, and the epitaxial quality of the CoSi2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi2 nucleation temperature above that of CoSi2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi2 growth occurs as a function of deposition temperature. First, the CoSi2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi2 growth mechanism.
dc.identifier.apacitationComrie, C. M., Ahmed, H., Smeets, D., Demeulemeester, J., Turner, S., Van Tendeloo, G., ... Vantomme, A. (2013). Effect of high temperature deposition on CoSi 2 phase formation. <i>Journal of Applied Physics</i>, 113(23), 234902 - 177. http://hdl.handle.net/11427/34498en_ZA
dc.identifier.chicagocitationComrie, C M, H Ahmed, D Smeets, J Demeulemeester, S Turner, G Van Tendeloo, C Detavernier, and A Vantomme "Effect of high temperature deposition on CoSi 2 phase formation." <i>Journal of Applied Physics</i> 113, 23. (2013): 234902 - 177. http://hdl.handle.net/11427/34498en_ZA
dc.identifier.citationComrie, C.M., Ahmed, H., Smeets, D., Demeulemeester, J., Turner, S., Van Tendeloo, G., Detavernier, C. & Vantomme, A. et al. 2013. Effect of high temperature deposition on CoSi 2 phase formation. <i>Journal of Applied Physics.</i> 113(23):234902 - 177. http://hdl.handle.net/11427/34498en_ZA
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issn1520-8850
dc.identifier.ris TY - Journal Article AU - Comrie, C M AU - Ahmed, H AU - Smeets, D AU - Demeulemeester, J AU - Turner, S AU - Van Tendeloo, G AU - Detavernier, C AU - Vantomme, A AB - Abstract: This paper discusses the nucleation behaviour of the CoSi to CoSi2 transformation from cobalt silicide thin films grown by deposition at elevated substrate temperatures ranging from 375 °C to 600 °C. A combination of channelling, real-time Rutherford backscattering spectrometry, real-time x-ray diffraction, and transmission electron microscopy was used to investigate the effect of the deposition temperature on the subsequent formation temperature of CoSi2, its growth behaviour, and the epitaxial quality of the CoSi2 thus formed. The temperature at which deposition took place was observed to exert a significant and systematic influence on both the formation temperature of CoSi2 and its growth mechanism. CoSi films grown at the lowest temperatures were found to increase the CoSi2 nucleation temperature above that of CoSi2 grown by conventional solid phase reaction, whereas the higher deposition temperatures reduced the nucleation temperature significantly. In addition, a systematic change in growth mechanism of the subsequent CoSi2 growth occurs as a function of deposition temperature. First, the CoSi2 growth rate from films grown at the lower reactive deposition temperatures is substantially lower than that grown at higher reactive deposition temperatures, even though the onset of growth occurs at a higher temperature, Second, for deposition temperatures below 450 °C, the growth appears columnar, indicating nucleation controlled growth. Elevated deposition temperatures, on the other hand, render the CoSi2 formation process layer-by-layer which indicates enhanced nucleation of the CoSi2 and diffusion controlled growth. Our results further indicate that this observed trend is most likely related to stress and changes in microstructure introduced during reactive deposition of the CoSi film. The deposition temperature therefore provides a handle to tune the CoSi2 growth mechanism. DA - 2013 DB - OpenUCT DP - University of Cape Town IS - 23 J1 - Journal of Applied Physics LK - https://open.uct.ac.za PY - 2013 SM - 0021-8979 SM - 1089-7550 SM - 1520-8850 T1 - Effect of high temperature deposition on CoSi 2 phase formation TI - Effect of high temperature deposition on CoSi 2 phase formation UR - http://hdl.handle.net/11427/34498 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/34498
dc.identifier.vancouvercitationComrie CM, Ahmed H, Smeets D, Demeulemeester J, Turner S, Van Tendeloo G, et al. Effect of high temperature deposition on CoSi 2 phase formation. Journal of Applied Physics. 2013;113(23):234902 - 177. http://hdl.handle.net/11427/34498.en_ZA
dc.language.isoeng
dc.publisher.departmentDepartment of Physics
dc.publisher.facultyFaculty of Science
dc.sourceJournal of Applied Physics
dc.source.journalissue23
dc.source.journalvolume113
dc.source.pagination234902 - 177
dc.source.urihttps://dx.doi.org/10.1063/1.4811352
dc.subject.otherKINETICS
dc.subject.otherNUCLEATION
dc.subject.otherPhysics
dc.subject.otherSTRESS
dc.subject.otherREACTIVE DEPOSITION
dc.subject.otherTHIN-FILMS
dc.subject.otherChemistry
dc.subject.otherIN-SITU
dc.subject.otherGROWTH
dc.subject.otherSI(100)
dc.subject.otherEPITAXIAL COSI2
dc.subject.otherSILICIDE FORMATION
dc.titleEffect of high temperature deposition on CoSi 2 phase formation
dc.typeJournal Article
uct.type.publicationResearch
uct.type.resourceJournal Article
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
ComrieCM_Effecthigh_temp_2013.pdf
Size:
2.17 MB
Format:
Adobe Portable Document Format
Description:
Download
Collections
Journal Articles