A study of copper diffusion through Pd₂Si thin films

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dc.contributor.advisorComrie, Craig Men_ZA
dc.contributor.authorGeduld, Dieter Rudien_ZA
dc.date.accessioned2016-03-30T14:51:55Z
dc.date.available2016-03-30T14:51:55Z
dc.date.issued1997en_ZA
dc.description.abstractIt is now generally recognized that unless an alternative for aluminium is found the resistivity of the metal interconnects will soon limit device performance. Copper, with its low resistivity and greater resistance to electromigration is one of the obvious substitutes. However, before aluminium can be replaced by copper, a careful study of the reactivity of copper with metal-silicides used in devices needs to be carried out. This study involves a dynamic RBS investigation of the reaction of copper with Pd₂Si films grown on Si<100> and Si<lll> substrates. It was found that copper diffused through the Pd₂Si layer and reacted with the single crystal silicon substrate at relatively low temperatures. The onset temperature observed for copper diffusion was found to differ for Pd2Si films grown on the two different substrate orientations, Si<100> and Si<lll>. Measurements of the activation energies for Cu-silicide growth on Pd₂Si/Si<100> and Pd₂Si/Si<lll> were also made.en_ZA
dc.identifier.apacitationGeduld, D. R. (1997). <i>A study of copper diffusion through Pd₂Si thin films</i>. (Thesis). University of Cape Town ,Faculty of Science ,Department of Physics. Retrieved from http://hdl.handle.net/11427/18431en_ZA
dc.identifier.chicagocitationGeduld, Dieter Rudi. <i>"A study of copper diffusion through Pd₂Si thin films."</i> Thesis., University of Cape Town ,Faculty of Science ,Department of Physics, 1997. http://hdl.handle.net/11427/18431en_ZA
dc.identifier.citationGeduld, D. 1997. A study of copper diffusion through Pd₂Si thin films. University of Cape Town.en_ZA
dc.identifier.ris TY - Thesis / Dissertation AU - Geduld, Dieter Rudi AB - It is now generally recognized that unless an alternative for aluminium is found the resistivity of the metal interconnects will soon limit device performance. Copper, with its low resistivity and greater resistance to electromigration is one of the obvious substitutes. However, before aluminium can be replaced by copper, a careful study of the reactivity of copper with metal-silicides used in devices needs to be carried out. This study involves a dynamic RBS investigation of the reaction of copper with Pd₂Si films grown on Si<100> and Si<lll> substrates. It was found that copper diffused through the Pd₂Si layer and reacted with the single crystal silicon substrate at relatively low temperatures. The onset temperature observed for copper diffusion was found to differ for Pd2Si films grown on the two different substrate orientations, Si<100> and Si<lll>. Measurements of the activation energies for Cu-silicide growth on Pd₂Si/Si<100> and Pd₂Si/Si<lll> were also made. DA - 1997 DB - OpenUCT DP - University of Cape Town LK - https://open.uct.ac.za PB - University of Cape Town PY - 1997 T1 - A study of copper diffusion through Pd₂Si thin films TI - A study of copper diffusion through Pd₂Si thin films UR - http://hdl.handle.net/11427/18431 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/18431
dc.identifier.vancouvercitationGeduld DR. A study of copper diffusion through Pd₂Si thin films. [Thesis]. University of Cape Town ,Faculty of Science ,Department of Physics, 1997 [cited yyyy month dd]. Available from: http://hdl.handle.net/11427/18431en_ZA
dc.language.isoengen_ZA
dc.publisher.departmentDepartment of Physicsen_ZA
dc.publisher.facultyFaculty of Scienceen_ZA
dc.publisher.institutionUniversity of Cape Town
dc.subject.otherPhysicsen_ZA
dc.titleA study of copper diffusion through Pd₂Si thin filmsen_ZA
dc.typeMaster Thesis
dc.type.qualificationlevelMasters
dc.type.qualificationnameMScen_ZA
uct.type.filetypeText
uct.type.filetypeImage
uct.type.publicationResearchen_ZA
uct.type.resourceThesisen_ZA
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