The effect of a top gate voltage on the Quantum Hall measurement of a 2DEG InGaAs/InAlAs hetero-structure
| dc.contributor.advisor | Blumenthal, Mark | |
| dc.contributor.author | Maguim, Silatsa Carine | |
| dc.date.accessioned | 2023-03-17T12:35:27Z | |
| dc.date.available | 2023-03-17T12:35:27Z | |
| dc.date.issued | 2022 | |
| dc.date.updated | 2023-03-17T07:16:28Z | |
| dc.description.abstract | The main purpose of this thesis is to investigate the quantization of the Hall resistance "Rxy " as well as the Shubnikov De Haas oscillations of the longitudinal "Rxx " resistance in a two dimensional electron system at different gate voltages. The sample measured utilised the InGaAs/InAlAs heterostructure grown via Molecular Beam Epitaxy (MBE). The above-mentioned effects are investigated before and after exposure of the sample to UV light. To calculate the electron density and mobility of the sample on each gate voltage, two different methods are used. The Fast Fourier transform method and the minima method. The results show that illumination increase the electron density and mobility of the sample. Results further show that both methods found similar results. Another remarkable observation is that the as gate voltage becomes more negative the density of electrons decreases and so the mobility. The maximum electron density using the FFT method is 1.8560 1011cm−2 with the mobility of 363880cm2V −1 s −1 . This results fall within the standard errors calculated by the minima method and given by: 1.7889 ± 0.026727 1011cm−2 with a mobility of 378340cm2V −1 s −1 . | |
| dc.identifier.apacitation | Maguim, S. C. (2022). <i>The effect of a top gate voltage on the Quantum Hall measurement of a 2DEG InGaAs/InAlAs hetero-structure</i>. (). ,Faculty of Science ,Department of Physics. Retrieved from http://hdl.handle.net/11427/37498 | en_ZA |
| dc.identifier.chicagocitation | Maguim, Silatsa Carine. <i>"The effect of a top gate voltage on the Quantum Hall measurement of a 2DEG InGaAs/InAlAs hetero-structure."</i> ., ,Faculty of Science ,Department of Physics, 2022. http://hdl.handle.net/11427/37498 | en_ZA |
| dc.identifier.citation | Maguim, S.C. 2022. The effect of a top gate voltage on the Quantum Hall measurement of a 2DEG InGaAs/InAlAs hetero-structure. . ,Faculty of Science ,Department of Physics. http://hdl.handle.net/11427/37498 | en_ZA |
| dc.identifier.ris | TY - Master Thesis AU - Maguim, Silatsa Carine AB - The main purpose of this thesis is to investigate the quantization of the Hall resistance "Rxy " as well as the Shubnikov De Haas oscillations of the longitudinal "Rxx " resistance in a two dimensional electron system at different gate voltages. The sample measured utilised the InGaAs/InAlAs heterostructure grown via Molecular Beam Epitaxy (MBE). The above-mentioned effects are investigated before and after exposure of the sample to UV light. To calculate the electron density and mobility of the sample on each gate voltage, two different methods are used. The Fast Fourier transform method and the minima method. The results show that illumination increase the electron density and mobility of the sample. Results further show that both methods found similar results. Another remarkable observation is that the as gate voltage becomes more negative the density of electrons decreases and so the mobility. The maximum electron density using the FFT method is 1.8560 1011cm−2 with the mobility of 363880cm2V −1 s −1 . This results fall within the standard errors calculated by the minima method and given by: 1.7889 ± 0.026727 1011cm−2 with a mobility of 378340cm2V −1 s −1 . DA - 2022_ DB - OpenUCT DP - University of Cape Town KW - Physics LK - https://open.uct.ac.za PY - 2022 T1 - The effect of a top gate voltage on the Quantum Hall measurement of a 2DEG InGaAs/InAlAs hetero-structure TI - The effect of a top gate voltage on the Quantum Hall measurement of a 2DEG InGaAs/InAlAs hetero-structure UR - http://hdl.handle.net/11427/37498 ER - | en_ZA |
| dc.identifier.uri | http://hdl.handle.net/11427/37498 | |
| dc.identifier.vancouvercitation | Maguim SC. The effect of a top gate voltage on the Quantum Hall measurement of a 2DEG InGaAs/InAlAs hetero-structure. []. ,Faculty of Science ,Department of Physics, 2022 [cited yyyy month dd]. Available from: http://hdl.handle.net/11427/37498 | en_ZA |
| dc.language.rfc3066 | eng | |
| dc.publisher.department | Department of Physics | |
| dc.publisher.faculty | Faculty of Science | |
| dc.subject | Physics | |
| dc.title | The effect of a top gate voltage on the Quantum Hall measurement of a 2DEG InGaAs/InAlAs hetero-structure | |
| dc.type | Master Thesis | |
| dc.type.qualificationlevel | Masters | |
| dc.type.qualificationlevel | MSc |