Sn diffusion during Ni germanide growth on Ge1– xSnx

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dc.contributor.authorDemeulemeester, J
dc.contributor.authorSchrauwen, A
dc.contributor.authorNakatsuka, O
dc.contributor.authorZaima, S
dc.contributor.authorAdachi, M
dc.contributor.authorShimura, Y
dc.contributor.authorComrie, C M
dc.contributor.authorFleischmann, C
dc.contributor.authorDetavernier, C
dc.contributor.authorTemst, K
dc.contributor.authorVantomme, A
dc.date.accessioned2021-10-08T11:00:56Z
dc.date.available2021-10-08T11:00:56Z
dc.date.issued2011
dc.description.abstractWe report on the redistribution of Sn during Ni germanide formation on Ge1– x Sn x /〈Ge(100)〉 and its influence on the thin film growth and properties. These results show that the reaction involves the formation of Ni5Ge3 and NiGe. Sn redistributes homogenously in both phases, in which the Sn/Ge ratio retains the ratio of the as-deposited Ge1– x Sn x film. Sn continues to diffuse after full NiGe formation and segregates in two regions: (1) at the interface between the germanide and Ge1– x Sn x and (2) at the surface, which has major implications for the thin film and contact properties.
dc.identifier.apacitationDemeulemeester, J., Schrauwen, A., Nakatsuka, O., Zaima, S., Adachi, M., Shimura, Y., ... Vantomme, A. (2011). Sn diffusion during Ni germanide growth on Ge1– xSnx. <i>Applied Physics Letters</i>, 99(21), 211905 - 177. http://hdl.handle.net/11427/35050en_ZA
dc.identifier.chicagocitationDemeulemeester, J, A Schrauwen, O Nakatsuka, S Zaima, M Adachi, Y Shimura, C M Comrie, et al "Sn diffusion during Ni germanide growth on Ge1– xSnx." <i>Applied Physics Letters</i> 99, 21. (2011): 211905 - 177. http://hdl.handle.net/11427/35050en_ZA
dc.identifier.citationDemeulemeester, J., Schrauwen, A., Nakatsuka, O., Zaima, S., Adachi, M., Shimura, Y., Comrie, C.M. & Fleischmann, C. et al. 2011. Sn diffusion during Ni germanide growth on Ge1– xSnx. <i>Applied Physics Letters.</i> 99(21):211905 - 177. http://hdl.handle.net/11427/35050en_ZA
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issn1520-8842
dc.identifier.ris TY - Journal Article AU - Demeulemeester, J AU - Schrauwen, A AU - Nakatsuka, O AU - Zaima, S AU - Adachi, M AU - Shimura, Y AU - Comrie, C M AU - Fleischmann, C AU - Detavernier, C AU - Temst, K AU - Vantomme, A AB - We report on the redistribution of Sn during Ni germanide formation on Ge1– x Sn x /〈Ge(100)〉 and its influence on the thin film growth and properties. These results show that the reaction involves the formation of Ni5Ge3 and NiGe. Sn redistributes homogenously in both phases, in which the Sn/Ge ratio retains the ratio of the as-deposited Ge1– x Sn x film. Sn continues to diffuse after full NiGe formation and segregates in two regions: (1) at the interface between the germanide and Ge1– x Sn x and (2) at the surface, which has major implications for the thin film and contact properties. DA - 2011 DB - OpenUCT DP - University of Cape Town IS - 21 J1 - Applied Physics Letters LK - https://open.uct.ac.za PY - 2011 SM - 0003-6951 SM - 1077-3118 SM - 1520-8842 T1 - Sn diffusion during Ni germanide growth on Ge1– xSnx TI - Sn diffusion during Ni germanide growth on Ge1– xSnx UR - http://hdl.handle.net/11427/35050 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/35050
dc.identifier.vancouvercitationDemeulemeester J, Schrauwen A, Nakatsuka O, Zaima S, Adachi M, Shimura Y, et al. Sn diffusion during Ni germanide growth on Ge1– xSnx. Applied Physics Letters. 2011;99(21):211905 - 177. http://hdl.handle.net/11427/35050.en_ZA
dc.language.isoeng
dc.publisher.departmentDepartment of Physics
dc.publisher.facultyFaculty of Science
dc.sourceApplied Physics Letters
dc.source.journalissue21
dc.source.journalvolume99
dc.source.pagination211905 - 177
dc.source.urihttps://dx.doi.org/10.1063/1.3662925
dc.subject.otherChemistry
dc.titleSn diffusion during Ni germanide growth on Ge1– xSnx
dc.typeJournal Article
uct.type.publicationResearch
uct.type.resourceJournal Article
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