On the nucleation of PdSi and NiSi 2 during the ternary Ni(Pd)/Si(100) reaction
| dc.contributor.author | Schrauwen, A | |
| dc.contributor.author | Demeulemeester, J | |
| dc.contributor.author | Kumar, A | |
| dc.contributor.author | Vandervorst, W | |
| dc.contributor.author | Comrie, C M | |
| dc.contributor.author | Detavernier, C | |
| dc.contributor.author | Temst, K | |
| dc.contributor.author | Vantomme, A | |
| dc.date.accessioned | 2021-10-08T07:04:25Z | |
| dc.date.available | 2021-10-08T07:04:25Z | |
| dc.date.issued | 2013 | |
| dc.description.abstract | During the solid phase reaction of a Ni(Pd) alloy with Si(100), phase separation of binary Ni- and Pd-silicides occurs. The PdSi monosilicide nucleates at temperatures significantly below the widely accepted nucleation temperature of the binary system. The decrease in nucleation temperature originates from the presence of the isomorphous NiSi, lowering the interface energy for PdSi nucleation. Despite the mutual solubility of NiSi and PdSi, the two binaries coexist in a temperature window of 100 °C. Only above 700 °C a Ni 1– x Pd x Si solid solution is formed, which in turn postpones the NiSi2 formation to a higher temperature due to entropy of mixing. Our findings highlight the overall importance of the interface energy for nucleation in ternary systems. | |
| dc.identifier.apacitation | Schrauwen, A., Demeulemeester, J., Kumar, A., Vandervorst, W., Comrie, C. M., Detavernier, C., ... Vantomme, A. (2013). On the nucleation of PdSi and NiSi 2 during the ternary Ni(Pd)/Si(100) reaction. <i>Journal of Applied Physics</i>, 114(6), 63518 - 177. http://hdl.handle.net/11427/34500 | en_ZA |
| dc.identifier.chicagocitation | Schrauwen, A, J Demeulemeester, A Kumar, W Vandervorst, C M Comrie, C Detavernier, K Temst, and A Vantomme "On the nucleation of PdSi and NiSi 2 during the ternary Ni(Pd)/Si(100) reaction." <i>Journal of Applied Physics</i> 114, 6. (2013): 63518 - 177. http://hdl.handle.net/11427/34500 | en_ZA |
| dc.identifier.citation | Schrauwen, A., Demeulemeester, J., Kumar, A., Vandervorst, W., Comrie, C.M., Detavernier, C., Temst, K. & Vantomme, A. et al. 2013. On the nucleation of PdSi and NiSi 2 during the ternary Ni(Pd)/Si(100) reaction. <i>Journal of Applied Physics.</i> 114(6):63518 - 177. http://hdl.handle.net/11427/34500 | en_ZA |
| dc.identifier.issn | 0021-8979 | |
| dc.identifier.issn | 1089-7550 | |
| dc.identifier.issn | 1520-8850 | |
| dc.identifier.ris | TY - Journal Article AU - Schrauwen, A AU - Demeulemeester, J AU - Kumar, A AU - Vandervorst, W AU - Comrie, C M AU - Detavernier, C AU - Temst, K AU - Vantomme, A AB - During the solid phase reaction of a Ni(Pd) alloy with Si(100), phase separation of binary Ni- and Pd-silicides occurs. The PdSi monosilicide nucleates at temperatures significantly below the widely accepted nucleation temperature of the binary system. The decrease in nucleation temperature originates from the presence of the isomorphous NiSi, lowering the interface energy for PdSi nucleation. Despite the mutual solubility of NiSi and PdSi, the two binaries coexist in a temperature window of 100 °C. Only above 700 °C a Ni 1– x Pd x Si solid solution is formed, which in turn postpones the NiSi2 formation to a higher temperature due to entropy of mixing. Our findings highlight the overall importance of the interface energy for nucleation in ternary systems. DA - 2013 DB - OpenUCT DP - University of Cape Town IS - 6 J1 - Journal of Applied Physics LK - https://open.uct.ac.za PY - 2013 SM - 0021-8979 SM - 1089-7550 SM - 1520-8850 T1 - On the nucleation of PdSi and NiSi 2 during the ternary Ni(Pd)/Si(100) reaction TI - On the nucleation of PdSi and NiSi 2 during the ternary Ni(Pd)/Si(100) reaction UR - http://hdl.handle.net/11427/34500 ER - | en_ZA |
| dc.identifier.uri | http://hdl.handle.net/11427/34500 | |
| dc.identifier.vancouvercitation | Schrauwen A, Demeulemeester J, Kumar A, Vandervorst W, Comrie CM, Detavernier C, et al. On the nucleation of PdSi and NiSi 2 during the ternary Ni(Pd)/Si(100) reaction. Journal of Applied Physics. 2013;114(6):63518 - 177. http://hdl.handle.net/11427/34500. | en_ZA |
| dc.language.iso | eng | |
| dc.publisher.department | Department of Physics | |
| dc.publisher.faculty | Faculty of Science | |
| dc.source | Journal of Applied Physics | |
| dc.source.journalissue | 6 | |
| dc.source.journalvolume | 114 | |
| dc.source.pagination | 63518 - 177 | |
| dc.source.uri | https://dx.doi.org/10.1063/1.4818333 | |
| dc.subject.other | Chemistry | |
| dc.subject.other | NI | |
| dc.subject.other | (111)SI | |
| dc.subject.other | THIN-FILMS | |
| dc.subject.other | MIXING ENTROPY | |
| dc.subject.other | THERMAL-STABILITY | |
| dc.subject.other | SILICIDE FORMATION | |
| dc.subject.other | PHASE-TRANSFORMATION | |
| dc.subject.other | BILAYERS | |
| dc.subject.other | DIFFUSION | |
| dc.title | On the nucleation of PdSi and NiSi 2 during the ternary Ni(Pd)/Si(100) reaction | |
| dc.type | Journal Article | |
| uct.type.publication | Research | |
| uct.type.resource | Journal Article |
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