In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)

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dc.contributor.authorDemeulemeester, J
dc.contributor.authorKnaepen, W
dc.contributor.authorSmeets, D
dc.contributor.authorSchrauwen, A
dc.contributor.authorComrie, C M
dc.contributor.authorBarradas, N P
dc.contributor.authorVieira, A
dc.contributor.authorDetavernier, C
dc.contributor.authorTemst, K
dc.contributor.authorVantomme, A
dc.date.accessioned2021-10-08T07:04:24Z
dc.date.available2021-10-08T07:04:24Z
dc.date.issued2012
dc.description.abstractWe report on the solid-phase reaction of thin Ni-rare earth films on a Si(100) substrate, for a variety of rare earth (RE) elements (Y, Gd, Dy, and Er). Both interlayer (Ni/RE/〈Si〉) and alloy (Ni-RE/〈Si〉) configurations were studied. The phase sequence during reaction was revealed using real-time x-ray diffraction whereas the elemental diffusion and growth kinetics were examined by real-time Rutherford backscattering spectrometry. All RE elements studied exert a similar influence on the solid phase reaction. Independent of the RE element or its initial distribution a ternary Ni 2Si2 RE phase forms, which ends up at the surface after NiSi growth. With respect to growth kinetics, the RE metal addition hampers the Ni diffusion process even for low concentrations of 2.5 at. %, resulting in the simultaneous growth of Ni-rich silicide and NiSi. Moreover, the formation of Ni 2Si2 RE during NiSi growth alters the Ni diffusion mechanism in the interlayer causing a sudden acceleration of the Ni silicide growth. Besides a significant effect on the silicide growth, we have found that adding 5 at. % Er (relative to Ni) lowers the NiSi Schottky barrier height on n-type Si(100) by approximately 0.1 eV for the interlayer and alloy configuration.
dc.identifier.apacitationDemeulemeester, J., Knaepen, W., Smeets, D., Schrauwen, A., Comrie, C. M., Barradas, N. P., ... Vantomme, A. (2012). In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100). <i>Journal of Applied Physics</i>, 111(4), 43511 - 177. http://hdl.handle.net/11427/34497en_ZA
dc.identifier.chicagocitationDemeulemeester, J, W Knaepen, D Smeets, A Schrauwen, C M Comrie, N P Barradas, A Vieira, C Detavernier, K Temst, and A Vantomme "In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)." <i>Journal of Applied Physics</i> 111, 4. (2012): 43511 - 177. http://hdl.handle.net/11427/34497en_ZA
dc.identifier.citationDemeulemeester, J., Knaepen, W., Smeets, D., Schrauwen, A., Comrie, C.M., Barradas, N.P., Vieira, A. & Detavernier, C. et al. 2012. In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100). <i>Journal of Applied Physics.</i> 111(4):43511 - 177. http://hdl.handle.net/11427/34497en_ZA
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issn1520-8850
dc.identifier.ris TY - Journal Article AU - Demeulemeester, J AU - Knaepen, W AU - Smeets, D AU - Schrauwen, A AU - Comrie, C M AU - Barradas, N P AU - Vieira, A AU - Detavernier, C AU - Temst, K AU - Vantomme, A AB - We report on the solid-phase reaction of thin Ni-rare earth films on a Si(100) substrate, for a variety of rare earth (RE) elements (Y, Gd, Dy, and Er). Both interlayer (Ni/RE/〈Si〉) and alloy (Ni-RE/〈Si〉) configurations were studied. The phase sequence during reaction was revealed using real-time x-ray diffraction whereas the elemental diffusion and growth kinetics were examined by real-time Rutherford backscattering spectrometry. All RE elements studied exert a similar influence on the solid phase reaction. Independent of the RE element or its initial distribution a ternary Ni 2Si2 RE phase forms, which ends up at the surface after NiSi growth. With respect to growth kinetics, the RE metal addition hampers the Ni diffusion process even for low concentrations of 2.5 at. %, resulting in the simultaneous growth of Ni-rich silicide and NiSi. Moreover, the formation of Ni 2Si2 RE during NiSi growth alters the Ni diffusion mechanism in the interlayer causing a sudden acceleration of the Ni silicide growth. Besides a significant effect on the silicide growth, we have found that adding 5 at. % Er (relative to Ni) lowers the NiSi Schottky barrier height on n-type Si(100) by approximately 0.1 eV for the interlayer and alloy configuration. DA - 2012 DB - OpenUCT DP - University of Cape Town IS - 4 J1 - Journal of Applied Physics LK - https://open.uct.ac.za PY - 2012 SM - 0021-8979 SM - 1089-7550 SM - 1520-8850 T1 - In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100) TI - In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100) UR - http://hdl.handle.net/11427/34497 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/34497
dc.identifier.vancouvercitationDemeulemeester J, Knaepen W, Smeets D, Schrauwen A, Comrie CM, Barradas NP, et al. In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100). Journal of Applied Physics. 2012;111(4):43511 - 177. http://hdl.handle.net/11427/34497.en_ZA
dc.language.isoeng
dc.publisher.departmentDepartment of Physics
dc.publisher.facultyFaculty of Science
dc.sourceJournal of Applied Physics
dc.source.journalissue4
dc.source.journalvolume111
dc.source.pagination43511 - 177
dc.source.urihttps://dx.doi.org/10.1063/1.3681331
dc.subject.otherChemistry
dc.subject.otherTHIN-FILMS
dc.subject.otherINTERMETALLIC COMPOUNDS
dc.subject.otherRUTHERFORD BACKSCATTERING DATA
dc.subject.otherDIFFUSION MECHANISMS
dc.subject.otherTHERMAL-EXPANSION
dc.subject.otherSCHOTTKY-BARRIER
dc.subject.otherNICKEL SILICIDE
dc.subject.otherERBIUM
dc.subject.otherMARKER
dc.subject.otherMETALS
dc.titleIn situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100)
dc.typeJournal Article
uct.type.publicationResearch
uct.type.resourceJournal Article
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