Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates

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dc.contributor.advisorHärting, Margiten_ZA
dc.contributor.advisorBritton, David Ten_ZA
dc.contributor.authorMinani, Evaristeen_ZA
dc.date.accessioned2014-09-08T14:27:37Z
dc.date.available2014-09-08T14:27:37Z
dc.date.issued2002en_ZA
dc.descriptionIncludes bibliography.en_ZA
dc.description.abstractHydrogenated amorphous silicon (a-Si:H) is an important thin film semiconductor with a wide variety of applications in microelectronics and optoelectronics. However, it is metastable and photodegrades after a moderate light illumination (Staebler-Wronski effect). The most stable material has been suggested to be at the edge of crystallinity with microcrystalline inclusions. Using a combination of positron annihilation and X-ray diffraction techniques, the microstructure of hydrogenated amorphous silicon grown by hot wire chemical vapour deposition on glass substrates at different substrate temperatures ranging between 300°C and 500 °C is examined. In previous studies the crystallisation was accompanied by a relaxation of defect structure with an increase in free volume at positron annihilation site. In this work, both techniques show a relaxation of the network with increasing growth temperature, leading to a higher degree of ordering, shorter bond lengths, and a reduction in the average size of defects in the material.en_ZA
dc.identifier.apacitationMinani, E. (2002). <i>Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates</i>. (Thesis). University of Cape Town ,Faculty of Science ,Department of Physics. Retrieved from http://hdl.handle.net/11427/6995en_ZA
dc.identifier.chicagocitationMinani, Evariste. <i>"Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates."</i> Thesis., University of Cape Town ,Faculty of Science ,Department of Physics, 2002. http://hdl.handle.net/11427/6995en_ZA
dc.identifier.citationMinani, E. 2002. Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates. University of Cape Town.en_ZA
dc.identifier.ris TY - Thesis / Dissertation AU - Minani, Evariste AB - Hydrogenated amorphous silicon (a-Si:H) is an important thin film semiconductor with a wide variety of applications in microelectronics and optoelectronics. However, it is metastable and photodegrades after a moderate light illumination (Staebler-Wronski effect). The most stable material has been suggested to be at the edge of crystallinity with microcrystalline inclusions. Using a combination of positron annihilation and X-ray diffraction techniques, the microstructure of hydrogenated amorphous silicon grown by hot wire chemical vapour deposition on glass substrates at different substrate temperatures ranging between 300°C and 500 °C is examined. In previous studies the crystallisation was accompanied by a relaxation of defect structure with an increase in free volume at positron annihilation site. In this work, both techniques show a relaxation of the network with increasing growth temperature, leading to a higher degree of ordering, shorter bond lengths, and a reduction in the average size of defects in the material. DA - 2002 DB - OpenUCT DP - University of Cape Town LK - https://open.uct.ac.za PB - University of Cape Town PY - 2002 T1 - Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates TI - Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates UR - http://hdl.handle.net/11427/6995 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/6995
dc.identifier.vancouvercitationMinani E. Growth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substrates. [Thesis]. University of Cape Town ,Faculty of Science ,Department of Physics, 2002 [cited yyyy month dd]. Available from: http://hdl.handle.net/11427/6995en_ZA
dc.language.isoengen_ZA
dc.publisher.departmentDepartment of Physicsen_ZA
dc.publisher.facultyFaculty of Scienceen_ZA
dc.publisher.institutionUniversity of Cape Town
dc.subject.otherPhysicsen_ZA
dc.titleGrowth temperature and microstructural differences in hydrogenated amorphous silicon deposited on glass substratesen_ZA
dc.typeMaster Thesis
dc.type.qualificationlevelMasters
dc.type.qualificationnameMScen_ZA
uct.type.filetypeText
uct.type.filetypeImage
uct.type.publicationResearchen_ZA
uct.type.resourceThesisen_ZA
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