On the growth kinetics of Ni(Pt) silicide thin films

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dc.contributor.authorDemeulemeester, J
dc.contributor.authorSmeets, D
dc.contributor.authorComrie, C M
dc.contributor.authorBarradas, N P
dc.contributor.authorVieira, A
dc.contributor.authorVan Bockstael, C
dc.contributor.authorDetavernier, C
dc.contributor.authorTemst, K
dc.contributor.authorVantomme, A
dc.date.accessioned2021-10-08T07:04:25Z
dc.date.available2021-10-08T07:04:25Z
dc.date.issued2013
dc.description.abstractWe report on the effect of Pt on the growth kinetics of δ-Ni2Si and Ni 1−xPtxSi thin films formed by solid phase reaction of a Ni(Pt) alloyed thin film on Si(100). The study was performed by real-time Rutherford backscattering spectrometry examining the silicide growth rates for initial Pt concentrations of 0, 1, 3, 7, and 10 at. % relative to the Ni content. Pt was found to exert a drastic effect on the growth kinetics of both phases. δ-Ni2Si growth is slowed down tremendously, which results in the simultaneous growth of this phase with Ni 1−xPtxSi. Activation energies extracted for the Ni 1−xPtxSi growth process exhibit an increase from Ea = 1.35 ± 0.06 eV for binary NiSi to Ea = 2.7 ± 0.2 eV for Ni 1−xPtxSi with an initial Pt concentration of 3 at. %. Further increasing the Pt content to 10 at. % merely increases the activation energy for Ni 1−xPtxSi growth to Ea = 3.1 ± 0.5 eV.
dc.identifier.apacitationDemeulemeester, J., Smeets, D., Comrie, C. M., Barradas, N. P., Vieira, A., Van Bockstael, C., ... Vantomme, A. (2013). On the growth kinetics of Ni(Pt) silicide thin films. <i>Journal of Applied Physics</i>, 113(16), 163504 - 177. http://hdl.handle.net/11427/34499en_ZA
dc.identifier.chicagocitationDemeulemeester, J, D Smeets, C M Comrie, N P Barradas, A Vieira, C Van Bockstael, C Detavernier, K Temst, and A Vantomme "On the growth kinetics of Ni(Pt) silicide thin films." <i>Journal of Applied Physics</i> 113, 16. (2013): 163504 - 177. http://hdl.handle.net/11427/34499en_ZA
dc.identifier.citationDemeulemeester, J., Smeets, D., Comrie, C.M., Barradas, N.P., Vieira, A., Van Bockstael, C., Detavernier, C. & Temst, K. et al. 2013. On the growth kinetics of Ni(Pt) silicide thin films. <i>Journal of Applied Physics.</i> 113(16):163504 - 177. http://hdl.handle.net/11427/34499en_ZA
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issn1520-8850
dc.identifier.ris TY - Journal Article AU - Demeulemeester, J AU - Smeets, D AU - Comrie, C M AU - Barradas, N P AU - Vieira, A AU - Van Bockstael, C AU - Detavernier, C AU - Temst, K AU - Vantomme, A AB - We report on the effect of Pt on the growth kinetics of δ-Ni2Si and Ni 1−xPtxSi thin films formed by solid phase reaction of a Ni(Pt) alloyed thin film on Si(100). The study was performed by real-time Rutherford backscattering spectrometry examining the silicide growth rates for initial Pt concentrations of 0, 1, 3, 7, and 10 at. % relative to the Ni content. Pt was found to exert a drastic effect on the growth kinetics of both phases. δ-Ni2Si growth is slowed down tremendously, which results in the simultaneous growth of this phase with Ni 1−xPtxSi. Activation energies extracted for the Ni 1−xPtxSi growth process exhibit an increase from Ea = 1.35 ± 0.06 eV for binary NiSi to Ea = 2.7 ± 0.2 eV for Ni 1−xPtxSi with an initial Pt concentration of 3 at. %. Further increasing the Pt content to 10 at. % merely increases the activation energy for Ni 1−xPtxSi growth to Ea = 3.1 ± 0.5 eV. DA - 2013 DB - OpenUCT DP - University of Cape Town IS - 16 J1 - Journal of Applied Physics LK - https://open.uct.ac.za PY - 2013 SM - 0021-8979 SM - 1089-7550 SM - 1520-8850 T1 - On the growth kinetics of Ni(Pt) silicide thin films TI - On the growth kinetics of Ni(Pt) silicide thin films UR - http://hdl.handle.net/11427/34499 ER - en_ZA
dc.identifier.urihttp://hdl.handle.net/11427/34499
dc.identifier.vancouvercitationDemeulemeester J, Smeets D, Comrie CM, Barradas NP, Vieira A, Van Bockstael C, et al. On the growth kinetics of Ni(Pt) silicide thin films. Journal of Applied Physics. 2013;113(16):163504 - 177. http://hdl.handle.net/11427/34499.en_ZA
dc.language.isoeng
dc.publisher.departmentDepartment of Physics
dc.publisher.facultyFaculty of Science
dc.sourceJournal of Applied Physics
dc.source.journalissue16
dc.source.journalvolume113
dc.source.pagination163504 - 177
dc.source.urihttps://dx.doi.org/10.1063/1.4802738
dc.subject.otherChemistry
dc.subject.otherPHASE-FORMATION
dc.subject.otherTHERMAL-STABILITY
dc.subject.otherNISI FILMS
dc.subject.otherNI2SI
dc.subject.otherRESISTANCE MEASUREMENTS
dc.subject.otherRUTHERFORD BACKSCATTERING DATA
dc.subject.otherDIFFUSION MECHANISMS
dc.subject.otherMARKER
dc.subject.otherSI(100)
dc.subject.otherELEMENTS
dc.titleOn the growth kinetics of Ni(Pt) silicide thin films
dc.typeJournal Article
uct.type.publicationResearch
uct.type.resourceJournal Article
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