Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators

 

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dc.contributor.advisor Downing, B J en_ZA
dc.contributor.author Crouch, David Andrew en_ZA
dc.date.accessioned 2014-10-11T12:05:44Z
dc.date.available 2014-10-11T12:05:44Z
dc.date.issued 1988 en_ZA
dc.identifier.citation Crouch, D. 1988. Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators. University of Cape Town. en_ZA
dc.identifier.uri http://hdl.handle.net/11427/8329
dc.description Bibliography: leaves 175-177. en_ZA
dc.description.abstract This thesis is concerned with Gallium Arsenide Metal Semiconductor Field Effect Transistor Microstrip Integrated Circuit Dielectric Resonator Oscillators (GaAs MESFET MIC DROs) - the different types, their design and their performance compared to other high Q factor (ie narrowband) microwave oscillators. The thesis has three major objectives. The first is to collate the information required to build microwave DROs. The second is to present the practical results obtained from Dielectric Resonator Bandreject and Bandpass filters (DR BRFs and DR BPFs). The last is to present and compare results from a DR stabilised microstrip oscillator and three types of series feedback DROs. Narrowband oscillators are usually evaluated in terms of their frequency stability, reliability, size, cost, efficiency and output power characteristics. In terms of these parameters DROs outperform Gunn cavity oscillators and are only bettered by crystal locked sources in terms of frequency temperature stability and long-term stability. The components of a GaAs MESFET MIC DRO possess ideal properties for the construction of a narrowband source with the exception of the long term stability of the GaAs MESFET. GaAs MESFET•DROs have the best published DRO results for efficiency, output power, power temperature stability and external Q factor. Basic oscillator theory derived by Kurokawa can be applied to both negative resistance and feedback oscillators. Impedance locus, device-line and operating point concepts provide a convenient framework for understanding hysteresis in microwave oscillators. The work by Kurokawa can also be translated into the S-parameter domain which has proved convenient for the design of microwave oscillators. en_ZA
dc.subject.other Electrical and Electronic Engineering en_ZA
dc.title Gallium arsenide field effect transistors microstrip integrated circuit dielectric resonator oscillators en_ZA
dc.type Thesis / Dissertation en_ZA
uct.type.publication Research en_ZA
uct.type.resource Thesis en_ZA
dc.publisher.institution University of Cape Town
dc.publisher.faculty Faculty of Engineering & the Built Environment en_ZA
dc.publisher.department Department of Electrical Engineering en_ZA
dc.type.qualificationlevel Masters en_ZA
dc.type.qualificationname MSc en_ZA
uct.type.filetype Text
uct.type.filetype Image


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