The chemical vapour and liquid deposition of tetraethoxysilane on the external surface of ZSM-5

Abstract

The external acidity of ZSM-5 was modified by chemical vapour deposition (CVD) and chemical liquid deposition (CLD) of tetraethoxysilane [Si(OC2 H5 ) 4 ] using a static vacuum system, a vapour phase flow system and liquid phase deposition. Temperature programmed desorption (TPD) techniques were used to characterise the acidity changes arising from these modifications. Pyridine was used as a probe for the total acidity and 4-methyl quinoline (MQ) was used to probe the external acidity. The adsorption capacities of the samples were measured using n-hexane, p-xylene, o-xylene and 1,2,4-trimethyl benzene. The extent of Si(OC2 H5 ) 4 deposition was strongly dependent on temperature in both vapour phase flow and static vacuum systems. Continuous Si(OC2 H5 ) 4 deposition was observed in the presence of H2 O at relatively high temperatures when decomposition products were removed from the sample. It is proposed that physisorbed species need to be removed by evacuation or calcination to re-expose active sites, thereby enabling complete inertisation of the external surface acidity to occur, and that a more uniform covering can be obtained when a gradual deposition process is used. Such a process may be achieved by the use of diluents or by preventing overexposure of Si(OC2 H5 ) 4 to the sample under conditions where continuous deposition may occur. It was shown that it is possible to reduce the relative external surface acidity by 97% without significant changes in acidity as measured by Py-TPD or adsorption capacity.