Study of Pt-Ge interaction using thin film and lateral diffusion couples

 

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dc.contributor.advisor Comrie, Angus en_ZA
dc.contributor.author Nemutudi, Rudzani en_ZA
dc.date.accessioned 2016-03-17T12:46:50Z
dc.date.available 2016-03-17T12:46:50Z
dc.date.issued 1997 en_ZA
dc.identifier.citation Nemutudi, R. 1997. Study of Pt-Ge interaction using thin film and lateral diffusion couples. University of Cape Town. en_ZA
dc.identifier.uri http://hdl.handle.net/11427/17970
dc.description Bibliography: 104-107. en_ZA
dc.description.abstract The formation of germanides of platinum has been investigated using both conventional thin films and lateral diffusion couples. The investigation was carried out using such established techniques as XRD, RBS and SEM. Using results from both thin film and lateral diffusion couples, a comparison has been made of the behaviour of Pt-Ge system in parameters such as phase formation sequence, growth kinetics and dominant diffusing species. In their sequential order of formation, three distinct phases, Pt₂Ge, PtGe and PtGe₂, have been identified in thin films in the temperature range 200 - 300°C. The first phase, Pt₂Ge, was found not to follow a layered mode of formation. Both PtGe and PtGe₂ phases were found to obey a (t)1/2 law, indicating a diffusion limited growth process. By employing Ti as an inert marker, platinum was observed as the dominant diffusing species during Pt₂Ge formation. On the dominant diffusing species during PtGe and PtGe₂ formation, the thin film results were but tentative. Upon annealing at 500°C/30,90,180min, lateral diffusion couples of Pt rich source (on Ge thin film) resulted in only a limited lateral growth, and multiple phases were not observed. However, when samples of Ge rich source (on Pt thin film) were annealed at the same temperature and times, lateral interaction was observed proceeding on a relatively large scale. Germanium atoms were found to have encroached into the surrounding Pt thin film as far as ±30μm away from the Ge source region, with multiple phases growing simultaneously, viz PtGe₂, PtGe and Pt₂Ge₃. Inside the source region, the composition of the innermost compound corresponded to PtGe₂ phase. Pt₂Ge₃ was located between PtGe₂ and the initial island/thin film interface line. The compound outside the source region was characterised as PtGe. Pt₂Ge₃ phase was observed to have resulted from PtGe₂ disintegration through the mechanism 2PtGe₂ -+ Pt₂Ge₃ + Ge. Plots obtained from μRBS and SEM lateral measurements indicate that the growth of observed phases (PtGe₂, Pt₂Ge₃ and PtGe) all follow a square-root-of-time law, a characteristic of diffusion limited growth process. en_ZA
dc.language.iso eng en_ZA
dc.subject.other Physics en_ZA
dc.title Study of Pt-Ge interaction using thin film and lateral diffusion couples en_ZA
dc.type Master Thesis
uct.type.publication Research en_ZA
uct.type.resource Thesis en_ZA
dc.publisher.institution University of Cape Town
dc.publisher.faculty Faculty of Science en_ZA
dc.publisher.department Department of Physics en_ZA
dc.type.qualificationlevel Masters
dc.type.qualificationname MSc en_ZA
uct.type.filetype Text
uct.type.filetype Image
dc.identifier.apacitation Nemutudi, R. (1997). <i>Study of Pt-Ge interaction using thin film and lateral diffusion couples</i>. (Thesis). University of Cape Town ,Faculty of Science ,Department of Physics. Retrieved from http://hdl.handle.net/11427/17970 en_ZA
dc.identifier.chicagocitation Nemutudi, Rudzani. <i>"Study of Pt-Ge interaction using thin film and lateral diffusion couples."</i> Thesis., University of Cape Town ,Faculty of Science ,Department of Physics, 1997. http://hdl.handle.net/11427/17970 en_ZA
dc.identifier.vancouvercitation Nemutudi R. Study of Pt-Ge interaction using thin film and lateral diffusion couples. [Thesis]. University of Cape Town ,Faculty of Science ,Department of Physics, 1997 [cited yyyy month dd]. Available from: http://hdl.handle.net/11427/17970 en_ZA
dc.identifier.ris TY - Thesis / Dissertation AU - Nemutudi, Rudzani AB - The formation of germanides of platinum has been investigated using both conventional thin films and lateral diffusion couples. The investigation was carried out using such established techniques as XRD, RBS and SEM. Using results from both thin film and lateral diffusion couples, a comparison has been made of the behaviour of Pt-Ge system in parameters such as phase formation sequence, growth kinetics and dominant diffusing species. In their sequential order of formation, three distinct phases, Pt₂Ge, PtGe and PtGe₂, have been identified in thin films in the temperature range 200 - 300°C. The first phase, Pt₂Ge, was found not to follow a layered mode of formation. Both PtGe and PtGe₂ phases were found to obey a (t)1/2 law, indicating a diffusion limited growth process. By employing Ti as an inert marker, platinum was observed as the dominant diffusing species during Pt₂Ge formation. On the dominant diffusing species during PtGe and PtGe₂ formation, the thin film results were but tentative. Upon annealing at 500°C/30,90,180min, lateral diffusion couples of Pt rich source (on Ge thin film) resulted in only a limited lateral growth, and multiple phases were not observed. However, when samples of Ge rich source (on Pt thin film) were annealed at the same temperature and times, lateral interaction was observed proceeding on a relatively large scale. Germanium atoms were found to have encroached into the surrounding Pt thin film as far as ±30μm away from the Ge source region, with multiple phases growing simultaneously, viz PtGe₂, PtGe and Pt₂Ge₃. Inside the source region, the composition of the innermost compound corresponded to PtGe₂ phase. Pt₂Ge₃ was located between PtGe₂ and the initial island/thin film interface line. The compound outside the source region was characterised as PtGe. Pt₂Ge₃ phase was observed to have resulted from PtGe₂ disintegration through the mechanism 2PtGe₂ -+ Pt₂Ge₃ + Ge. Plots obtained from μRBS and SEM lateral measurements indicate that the growth of observed phases (PtGe₂, Pt₂Ge₃ and PtGe) all follow a square-root-of-time law, a characteristic of diffusion limited growth process. DA - 1997 DB - OpenUCT DP - University of Cape Town LK - https://open.uct.ac.za PB - University of Cape Town PY - 1997 T1 - Study of Pt-Ge interaction using thin film and lateral diffusion couples TI - Study of Pt-Ge interaction using thin film and lateral diffusion couples UR - http://hdl.handle.net/11427/17970 ER - en_ZA


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