Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques
Master Thesis
2004
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University of Cape Town
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Abstract
In this work we report on the electrical transport properties of two classes of silicon: hydrogenated amorphous silicon (a-Si:H) obtained by hot wire chemical vapour deposition (HWCVD), and printed nanocrystalline silicon (nc-Si), both deposited on a flexible, lightweight substrate of 80 g m-2 wood-free paper. For different devices such as field effect transistors and n-i-p solar cells, electrical measurements will be discussed. A special emphasis is placed on field effect mobility and amplification factor measurements because these provide information about the quality of the material.
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Includes bibliographical references (leaves 68-72).
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Nemalili, F. 2004. Electrical characterisation of simple a-Si:H and nc-Si devices on paper substrates deposited by hot wire chemical vapour deposition and printing techniques. University of Cape Town.