Laser induced epitaxy of Ni and Co silicides

 

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dc.contributor.advisor Comrie, Craig M en_ZA
dc.contributor.author Schroeder, Brett Robert en_ZA
dc.date.accessioned 2015-12-28T06:12:16Z
dc.date.available 2015-12-28T06:12:16Z
dc.date.issued 1995 en_ZA
dc.identifier.citation Schroeder, B. 1995. Laser induced epitaxy of Ni and Co silicides. University of Cape Town. en_ZA
dc.identifier.uri http://hdl.handle.net/11427/16013
dc.description Includes bibliographical references. en_ZA
dc.description.abstract Laser annealing of metal layers on silicon substrates failed to produce uniform silicide layers. This can be attributed to constitutional supercooling effects. Laser annealing of thermally grown monosilicides gave low (~5%) minimum yields for Co and Ni on <111> substrates1 as well as Ni on <100> substrates. The best yield achieved for Co on <100> substrates is 35%. The formation of a non-equilibrium epitaxial monosilicide was also achieved. Numerical calculations based on a heat flow approach gave fair quantitative agreement with experiment. en_ZA
dc.language.iso eng en_ZA
dc.subject.other Physics en_ZA
dc.title Laser induced epitaxy of Ni and Co silicides en_ZA
dc.type Thesis / Dissertation en_ZA
uct.type.publication Research en_ZA
uct.type.resource Thesis en_ZA
dc.publisher.institution University of Cape Town
dc.publisher.faculty Faculty of Science en_ZA
dc.publisher.department Department of Physics en_ZA
dc.type.qualificationlevel Masters en_ZA
dc.type.qualificationname MSc en_ZA
uct.type.filetype Text
uct.type.filetype Image


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