Laser induced epitaxy of Ni and Co silicides
Master Thesis
1995
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University of Cape Town
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Abstract
Laser annealing of metal layers on silicon substrates failed to produce uniform silicide layers. This can be attributed to constitutional supercooling effects. Laser annealing of thermally grown monosilicides gave low (~5%) minimum yields for Co and Ni on <111> substrates1 as well as Ni on <100> substrates. The best yield achieved for Co on <100> substrates is 35%. The formation of a non-equilibrium epitaxial monosilicide was also achieved. Numerical calculations based on a heat flow approach gave fair quantitative agreement with experiment.
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Includes bibliographical references.
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Reference:
Schroeder, B. 1995. Laser induced epitaxy of Ni and Co silicides. University of Cape Town.