Laser induced epitaxy of Ni and Co silicides

Master Thesis

1995

Permanent link to this Item
Authors
Supervisors
Journal Title
Link to Journal
Journal ISSN
Volume Title
Publisher
Publisher

University of Cape Town

License
Series
Abstract
Laser annealing of metal layers on silicon substrates failed to produce uniform silicide layers. This can be attributed to constitutional supercooling effects. Laser annealing of thermally grown monosilicides gave low (~5%) minimum yields for Co and Ni on <111> substrates1 as well as Ni on <100> substrates. The best yield achieved for Co on <100> substrates is 35%. The formation of a non-equilibrium epitaxial monosilicide was also achieved. Numerical calculations based on a heat flow approach gave fair quantitative agreement with experiment.
Description

Includes bibliographical references.

Keywords

Reference:

Collections